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PDF AS7C33256NTD16A Data sheet ( Hoja de datos )
| Número de pieza | AS7C33256NTD16A | |
| Descripción | 3.3V 256K X 16/18 SRAM | |
| Fabricantes | Alliance Semiconductor | |
| Logotipo |  |
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December 2002
AS7C33256NTD16A
AS7C33256NTD18A
®
9 .î 65$0 ZLWK 17'TM
Features
• Organization: 262,144 words × 16 or 18 bits
• NTD™1 architecture for efficient bus operation
• Fast clock speeds to 166 MHz in LVTTL/LVCMOS
• Fast clock to data access: 3.5/4.0/5.0 ns
• Fast OE access time: 3.5/4.0/5.0 ns
• Fully synchronous operation
• Flow-through or pipelined mode
• Asynchronous output enable control
1 NTD is a trademark of Alliance Semiconductor Corporation.
• Economical 100-pin TQFP package
• Byte write enables
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• 30 mW typical standby power
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
Logic block diagram
Pin arrangement for TQFP (top view)
A[17:0]
18
CE0
CE1
CE2
R/W
BWa
BWb
ADV / LD
FT
LBO
ZZ
D Aredgdirsetesrs Q
Burst logic
CLK
Control
logic
CLK
DQ [a:b] 16/18
D Data Q
Input
Register
CLK
CLK
CEN
18
DQ
Write delay
addr. registers
CLK
18
16/18
CLK
256K x 16/18
SRAM
Array
16/18 16/18
16/18
CLK
Output
Register
OE
16/18
OE
DQ [a:b]
NC
NC
NC
VDDQ
VSSQ
NC
NC
DQb
DQb
VSSQ
VDDQ
DQb
DQB
FT
VDD
NC
VSS
DQb
DQb
VDDQ
VSSQ
DQb
DQb
DQPb, NC
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
TQFP 14x20mm
80 A17
79 NC
78 NC
77 VDDQ
76 VSSQ
75 NC
74 DQPa, NC
73 DQa
72 DQa
71 VSSQ
70 VDDQ
69 DQa
68 DQa
67 VSS
66 NC
65 VDD
64 ZZ
63 DQa
62 DQa
61 VDDQ
60 VSSQ
59 DQa
58 DQa
57 NC
56 NC
55 VSSQ
54 VDDQ
53 NC
52 NC
51 NC
Note: Pins 24, 74 are NC for ×16
Selection Guide
Minimum cycle time
Maximum pipelined clock frequency
Maximum pipelined clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
-166
6
166
3.5
475
130
30
-133
7.5
133
4
425
100
30
-100
10
100
5
325
90
30
Units
ns
MHz
ns
mA
mA
mA
12/2/02, v.1.7
Alliance Semiconductor
P. 1 of 10
Copyright © Alliance Semiconductor. All rights reserved.
This datasheet has been downloaded from http://www.digchip.com at this page
1 page  
AS7C33256NTD16A
AS7C33256NTD18A
®
Recommended operating conditions
Parameter
Supply voltage
3.3V I/O supply
voltage
2.5V I/O supply
voltage
Input voltages1
Address and
control pins
I/O pins
Ambient operating temperature
Symbol
VDD
GND
VDDQ
GNDQ
VDDQ
GNDQ
VIH
VIL
VIH
VIL
TA
Min
3.135
0.0
3.135
0.0
2.35
0.0
2.0
–0.52
2.0
-0.52
0
Nominal
3.3
0.0
3.3
0.0
2.5
0.0
–
–
–
–
–
Max
3.465
0.0
3.465
0.0
2.65
0.0
VDD + 0.3
0.8
VDDQ + 0.3
0.8
70
Unit
V
V
V
V
V
V
V
°C
1 Input voltage ranges apply to 3.3V I/O operation. For 2.5V operation, contact factory for input specifications.
2 VIL min = –2.0V for pulse width less than 0.2 x tRC.
DC electrical characteristics for 3.3V I/O operation
166 133
100
Parameter
Symbol Test conditions
Min Max Min Max Min Max Unit
Input leakage current | ILI |1 VDD = Max, Vin = GND to VDD – 2 – 2 – 2 µA
Output leakage
current
| ILO |
OE ≥ VIH, VDD = Max,
Vout = GND to VDD
– 2 – 2 – 2 µA
Operating power
supply current
ICC2
CE = VIL, CE = VIH, CE = VIL,
f = fmax, Iout = 0 mA
–
450
–
425
–
325 mA
ISB 'HVHOHFWHG f = fmax
– 110 – 100 –
90 mA
Standby power supply
ISB1
'HVHOHFWHG f = 0
DOO 9IN ≤ 0.2V or ≥ VDD - 0.2V
–
30
–
30
–
30 mA
current
Deselected, f=fMax, ZZ ≥ VDD -
ISB2 0.2V
– 30 – 30 – 30 mA
All VIN ≤ VIL or ≥ VIH
Output voltage
VOL IOL = 8 mA, VDDQ = 3.6V
VOH IOH = –4 mA, VDDQ = 3.0V
– 0.4 – 0.4 – 0.4
2.4 – 2.4 – 2.4 –
V
V
1 LBO pin has an internal pull-up, and input leakage = ±10 µA.
2 ICC given with no output loading. ICC increases with faster cycle times and greater output loading
DC electrical characteristics for 2.5V I/O operation
166 133
Parameter Symbol Test conditions
Min Max Min Max
Output leakage
current
| ILO |
OE ≥ VIH, VDD = Max,
Vout = GND to VDD
-1 1 -1 1
Output voltage VOL IOL = 2 mA, VDDQ = 2.65V
–
0.7
–
0.7
VOH IOH = –2 mA, VDDQ = 2.35V 1.7 – 1.7 –
100
Min Max
-1 1
– 0.7
1.7 –
Unit
µA
V
12/2/02, v.1.7
Alliance Semiconductor
P. 5 of 10
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