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PDF SiR800DP Data sheet ( Hoja de datos )
| Número de pieza | SiR800DP | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 20 V (D-S) MOSFET
SiR800DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.0023 at VGS = 10 V
0.0026 at VGS = 4.5 V
0.0034 at VGS = 2.5 V
PowerPAK® SO-8
ID (A)a
50
50
50
Qg (Typ.)
41 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC
• Low Voltage Drive
• POL
• OR-ing
• Fixed Telecom
D
G
Bottom View
Ordering Information: SiR800DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
20
± 12
50a
50a
35.4b, c
28.2b, c
80
50a
6.2b, c
30
45
69
44.4
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
19
1.2
24 °C/W
1.8
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
SiR800DP
Vishay Siliconix
120
90
60 Package Limited
30
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
90 2.5
72 2.0
54 1.5
36 1.0
18 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiR800DP.PDF ] | |
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