IRFB4212PbF Datasheet PDF - International Rectifier
| Part Number | IRFB4212PbF | |
| Description | Digital Audiio MOSFET | |
| Manufacturers | International Rectifier | |
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DIGITAL AUDIO MOSFET
PD - 96918A
IRFB4212PbF
Features
• Key parameters optimized for Class-D audio
amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved
efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for
ruggedness
• Can deliver up to 150W per channel into 4Ω load in
half-bridge topology
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
100
72.5
15
8.3
2.2
175
D
G
V
m:
nC
nC
Ω
°C
S TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
100
±20
18
13
57
60
30
0.4
-55 to + 175
300
10lbxin (1.1Nxm)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Notes through
are on page 2
www.irf.com
Typ.
–––
0.50
–––
Max.
2.5
–––
62
Units
°C/W
1
9/16/05
|
| |
 
0.5
ID = 13A
0.4
0.3
0.2
0.1
0.0
6
TJ = 125°C
TJ = 25°C
8 10 12 14
VGS, Gate-to-Source Voltage (V)
16
Fig 12. On-Resistance Vs. Gate Voltage
10
Duty Cycle = Single Pulse
0.01
0.05
0.10
1
IRFB4212PbF
120
ID
100
TOP 3.2A
5.7A
BOTTOM 13A
80
60
40
20
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current Vs.Pulsewidth
1.0E-01
30
TOP
Single Pulse
BOTTOM 1% Duty Cycle
25 ID = 13A
20
15
10
5
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5
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| Information | Total 7 Pages | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IRFB4212PbF | The function is Digital Audiio MOSFET. International Rectifier | |
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