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PDF SiA920DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA920DJ | |
| Descripción | Dual N-Channel 8 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual N-Channel 8 V (D-S) MOSFET
SiA920DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
8
RDS(on) ()
0.027 at VGS = 4.5 V
0.031 at VGS = 2.5 V
0.036 at Vgs = 1.8 V
0.047 at Vgs = 1.5 V
0.110 at Vgs = 1.2 V
ID (A)a
4.5
4.5
4.5
4.5
1.5
PowerPAK SC-70-6 Dual
Qg (Typ.)
4.8 nC
1
S1
2
G1
D1
3
D2
D1
6
D2
G2
5
2.05 mm S2
4
2.05 mm
Ordering Information: SiA920DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
Part # code
CHX
XXX
Lot Traceability
and Date code
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch with Low Voltage Drop
• Load Switch for 1.2 V/1.5 V/1.8 V Power Lines
• Smart Phones, Tablet PCs, Portable Media Players
D1 D2
G1 G2
N-Channel MOSFET S1 N-Channel MOSFET S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
8
±5
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
1.6b, c
7.8
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
52
12.5
65 °C/W
16
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 63299
www.vishay.com
S11-1381-Rev. A, 11-Jul-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15 8
12
9
6
Package Limited
3
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiA920DJ
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63299
www.vishay.com
S11-1381-Rev. A, 11-Jul-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiA920DJ.PDF ] | |
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