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PDF SiA915DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA915DJ | |
| Descripción | Dual P-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
Dual P-Channel 30 V (D-S) MOSFET
SiA915DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.087 at VGS = - 10 V
- 30
0.145 at VGS = - 4.5 V
ID (A)
- 4.5a
- 4.5a
Qg (Typ.)
3.2 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Compliant to RoHS Directive 2002/95/EC
PowerPAK SC-70-6 Dual
APPLICATIONS
• Power Switch for Motor Drive for Portable Devices
1
S1
D1
D1
6
G2
5
2.05 mm
S2
4
2
G1
D2
3
D2
2.05 mm
Marking Code
Part # code
DLX
XXX
Lot Traceability
and Date code
S1 S2
G1 G2
D1 D2
Ordering Information: SiA915DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
- 30
± 20
- 4.5a
- 4.5a
- 3.7b, c
- 2.9b, c
- 15
- 4.5a
- 1.6b, c
6.5
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
RthJA
52
65 °C/W
Steady State
RthJC
12.5
16
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 67314
S11-0237-Rev. A, 14-Feb-11
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 8
8
6
Package Limited
4
2
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiA915DJ
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67314
S11-0237-Rev. A, 14-Feb-11
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiA915DJ.PDF ] | |
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