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PDF SiA910EDJ Data sheet ( Hoja de datos )
| Número de pieza | SiA910EDJ | |
| Descripción | Dual N-Channel 12 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual N-Channel 12 V (D-S) MOSFET
SiA910EDJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.028 at VGS = 4.5 V
12 0.033 at VGS = 2.5 V
0.042 at Vgs = 1.8 V
ID (A)a
4.5
4.5
4.5
Qg (Typ.)
6.2 nC
PowerPAK SC-70-6 Dual
1
S1
D1
D1
6
G2
5
2.05 mm
S2
4
2
G1
D2
3
D2
2.05 mm
FEATURES
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Protection: 2400 V
• 100 % Rg Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Load Switch for Portable Applications
• High Frequency DC/DC Converter
• DC/DC Converter
D1 D2
Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
Part # code
CFX
XXX
Lot Traceability
and Date code
G1 G2
N-Channel MOSFET S1
N-Channel MOSFET S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
12
±8
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
1.6b, c
7.8
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
52
12.5
65 °C/W
16
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 65535
For technical questions, contact: [email protected]
www.vishay.com
S13-0460-Rev. B, 04-Mar-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
10
100 µs
1
0.1
TA = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, 10 s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
15 8
SiA910EDJ
Vishay Siliconix
12
9
6
Package Limited
3
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65535
For technical questions, contact: [email protected]
www.vishay.com
S13-0460-Rev. B, 04-Mar-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiA910EDJ.PDF ] | |
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