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Datasheet SIA425EDJ Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SiA425EDJ | P-Channel 20-V (D-S) MOSFET SiA425EDJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.060 at VGS = - 4.5 V - 20 0.065 at VGS = - 3.6 V 0.080 at VGS = - 2.5 V 0.120 at VGS = - 1.8 V ID (A) - 4.5a - 4.5a - 4.5a -2 4.9 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definit | Vishay | mosfet |
SiA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SiA400EDJ | N-Channel 30 V (D-S) MOSFET SiA400EDJ
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.019 at VGS = 4.5 V 0.025 at VGS = 2.5 V ID (A)a 12 11.6 12 Qg (Typ.)
PowerPAK SC-70-6L-Single
• TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footpri Vishay mosfet | | |
2 | SiA406DJ | N-Channel 12-V (D-S) MOSFET New Product
SiA406DJ
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 12 RDS(on) (Ω) 0.0198 at VGS = 4.5 V 0.0222 at VGS = 2.5 V 0.0264 at VGS = 1.8 V ID (A)a 4.5 4.5 4.5 13.7 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power Vishay mosfet | | |
3 | SiA408DJ | N-Channel 30 V (D-S) MOSFET SiA408DJ
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.036 at VGS = 10 V 0.039 at VGS = 4.5 V 0.053 at VGS = 2.5 V ID (A)a 4.5 4.5 4.5 7 nC Qg (Typ.)
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Ther Vishay mosfet | | |
4 | SIA413DJ | P-Channel 12-V (D-S) MOSFET SiA413DJ
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.029 at VGS = - 4.5 V - 12 0.034 at VGS = - 2.5 V 0.044 at VGS = - 1.8 V 0.100 at VGS = - 1.5 V ID (A) - 12a - 12a - 12a -3 23 nC Qg (Typ.)
• TrenchFET® Power MOSFET • New Thermally Enhanced Vishay mosfet | | |
5 | SIA414DJ | Dual N-Channel 8-V (D-S) MOSFET
New Product
SiA414DJ
Vishay Siliconix
N-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω) 0.011 at VGS = 4.5 V 0.013 at VGS = 2.5 V 8 0.016 at VGS = 1.8 V 0.022 at VGS = 1.5 V 0.041 at VGS = 1.2 V ID (A)a 12 12 12 12 12 19 nC Qg (Typ)
FEATURES
• TrenchFET® Pow Vishay Siliconix mosfet | | |
6 | SIA415DJ | P-Channel 20-V (D-S) MOSFET New Product
SiA415DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) (Ω) 0.035 at VGS = - 4.5 V 0.051 at VGS = - 2.5 V ID (A) - 12a - 12a Qg (Typ) 15 nC
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Vishay mosfet | | |
7 | SIA416DJ | N-Channel 100 V (D-S) MOSFET SiA416DJ
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () Max. 0.083 at VGS = 10 V 0.130 at VGS = 4.5 V
PowerPAK SC-70-6L-Single
1 D 2 D 3 6 D 5 D S 4 Bottom View S 2.05 mm G
FEATURES
ID (A)a 11.3 9 Qg (Typ.) 3.5 nC
• TrenchFET® Power MOSFET • 100 % Rg Vishay mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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