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Datasheet SIA408DJ Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SiA408DJN-Channel 30 V (D-S) MOSFET

SiA408DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.036 at VGS = 10 V 0.039 at VGS = 4.5 V 0.053 at VGS = 2.5 V ID (A)a 4.5 4.5 4.5 7 nC Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Ther
Vishay
Vishay
mosfet


SiA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SiA400EDJN-Channel 30 V (D-S) MOSFET

SiA400EDJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.019 at VGS = 4.5 V 0.025 at VGS = 2.5 V ID (A)a 12 11.6 12 Qg (Typ.) PowerPAK SC-70-6L-Single • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footpri
Vishay
Vishay
mosfet
2SiA406DJN-Channel 12-V (D-S) MOSFET

New Product SiA406DJ Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.0198 at VGS = 4.5 V 0.0222 at VGS = 2.5 V 0.0264 at VGS = 1.8 V ID (A)a 4.5 4.5 4.5 13.7 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power
Vishay
Vishay
mosfet
3SiA408DJN-Channel 30 V (D-S) MOSFET

SiA408DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.036 at VGS = 10 V 0.039 at VGS = 4.5 V 0.053 at VGS = 2.5 V ID (A)a 4.5 4.5 4.5 7 nC Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Ther
Vishay
Vishay
mosfet
4SIA413DJP-Channel 12-V (D-S) MOSFET

SiA413DJ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.029 at VGS = - 4.5 V - 12 0.034 at VGS = - 2.5 V 0.044 at VGS = - 1.8 V 0.100 at VGS = - 1.5 V ID (A) - 12a - 12a - 12a -3 23 nC Qg (Typ.) • TrenchFET® Power MOSFET • New Thermally Enhanced
Vishay
Vishay
mosfet
5SIA414DJDual N-Channel 8-V (D-S) MOSFET

New Product SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.011 at VGS = 4.5 V 0.013 at VGS = 2.5 V 8 0.016 at VGS = 1.8 V 0.022 at VGS = 1.5 V 0.041 at VGS = 1.2 V ID (A)a 12 12 12 12 12 19 nC Qg (Typ) FEATURES • TrenchFET® Pow
Vishay Siliconix
Vishay Siliconix
mosfet
6SIA415DJP-Channel 20-V (D-S) MOSFET

New Product SiA415DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.035 at VGS = - 4.5 V 0.051 at VGS = - 2.5 V ID (A) - 12a - 12a Qg (Typ) 15 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package -
Vishay
Vishay
mosfet
7SIA416DJN-Channel 100 V (D-S) MOSFET

SiA416DJ Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.083 at VGS = 10 V 0.130 at VGS = 4.5 V PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 Bottom View S 2.05 mm G FEATURES ID (A)a 11.3 9 Qg (Typ.) 3.5 nC • TrenchFET® Power MOSFET • 100 % Rg
Vishay
Vishay
mosfet



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