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PDF KF6N60D Data sheet ( Hoja de datos )
| Número de pieza | KF6N60D | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 600V, ID= 5A
RDS(ON)=1.4 (Max) @VGS =10V
Qg(typ.) =16nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
RATING
KF6N60D/I
600
30
5
3.15
15*
180
4
4.5
69.4
0.56
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain current limited by maximum junction temperature.
1.8
110
PIN CONNECTION
D
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF6N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF6N60D
A
CD
H
G
FF
B
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_ 0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_ 0.10
N 0.70 MIN
O 0.1 MAX
1 23
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF6N60I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
IPAK(1)
G
S
2011. 7. 25
Revision No : 0
1/6
1 page  
KF6N60D/I
2011. 7. 25
Revision No : 0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KF6N60D.PDF ] | |
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| KF6N60I | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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