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What is DTC114TM3T5G?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Digital Transistors".


DTC114TM3T5G Datasheet PDF - ON Semiconductor

Part Number DTC114TM3T5G
Description Digital Transistors
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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MUN2215, MMUN2215L,
MUN5215, DTC114TE,
DTC114TM3, NSBC114TF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
XM 1
SOT723
CASE 631AA
STYLE 1
SOT1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2013 Rev. 1
1
Publication Order Number:
DTC114T/D

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DTC114TM3T5G equivalent
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
1
IC/IB = 10
TYPICAL CHARACTERISTICS
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3
1000
75°C
VCE = 10 V
0.1 75°C
25°C
25°C
0.01
100 TA = 25°C
10
25°C
0.001
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
1
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
f = 10 kHz
IE = 0 A
TA = 25°C
5 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
100
75°C
10
25°C
1
TA = 25°C
0.1
0.01
0.001
0
VO = 5 V
123 4567 89
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
10
10
TA = 25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
50
http://onsemi.com
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DTC114TM3T5G datasheet


1. Datasheet - NPN Digital Transistor

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Featured Datasheets

Part NumberDescriptionMFRS
DTC114TM3T5GThe function is Digital Transistors. ON SemiconductorON Semiconductor
DTC114TM3T5GThe function is Digital Transistors. ON SemiconductorON Semiconductor

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