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Datasheet MIP3E30MP Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MIP3E30MP | Silicon MOS type integrated circuit (IPD)
MIP3E30MP
MOS
■
• (MIP2ExD • • 50% )
8
9.4±0.3
Unit : mm
+0 0.25 -0.05 .10
7
5
7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2
■
•
1 2 3 4
2.54±0.25
■
VD VC ID IDP IC Tch Tstg 700 8 0.88 1.7 0.1 150 −55 ∼ +150 V V A A A °C °C
0.5±0.1 1.2±0.25
(2,3,7PIN)
1 : Source 2 : Sou | Panasonic | data |
MIP Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MIP0040MS | Silicon MOSFET type Integrated Circuit MIP0040MS
Type Application Structure Equivalent Circuit Out Line
Silicon MOSFET type Integrated Circuit
For Switching Power Supply Control
CMOS type
Figure 8
DIP7-A1
Marking
A. ABSOLUTE MAXIMUM RATINGS (Ta= 25°C±3°C)
No. Item Symbol
1 VIN Voltage 2 VCC Voltage 3 VDD Voltage 4 OUT Voltag Panasonic mosfet | | |
2 | MIP0122SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
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U 4 t
m o .c
w
w
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t a
S a
e h
U 4 t e
.c
m o
w
w
w
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a
S a t
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U 4 t
m o .c
Panasonic data | | |
3 | MIP0123SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
Panasonic data | | |
4 | MIP0124SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
Panasonic data | | |
5 | MIP0125SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
Panasonic data | | |
6 | MIP0129SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
Panasonic data | | |
7 | MIP0210SP | Silicon MOS IC Intelligent Power Devices (IPDs)
MIP0210SP
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integra Panasonic Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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