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What is K4B1G0846G-BCH9?

This electronic component, produced by the manufacturer "Samsung", performs the same function as "1Gb G-die DDR3 SDRAM".


K4B1G0846G-BCH9 Datasheet PDF - Samsung

Part Number K4B1G0846G-BCH9
Description 1Gb G-die DDR3 SDRAM
Manufacturers Samsung 
Logo Samsung Logo 


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Rev. 1.1, Aug. 2011
K4B1G0446G
K4B1G0846G
1Gb G-die DDR3 SDRAM
78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2011 Samsung Electronics Co., Ltd. All rights reserved.
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K4B1G0846G-BCH9 equivalent
K4B1G0446G
K4B1G0846G
datasheet
Rev. 1.1
DDR3 SDRAM
1. Ordering Information
[ Table 1 ] Samsung 1Gb DDR3 G-die ordering information table
Organization
DDR3-1066 (7-7-7)
DDR3-1333 (9-9-9)4
256Mx4
K4B1G0446G-BCF8
K4B1G0446G-BCH9
128Mx8
K4B1G0846G-BCF8
K4B1G0846G-BCH9
NOTE :
1. Speed bin is in order of CL-tRCD-tRP.
2. Backward compatible to DDR3-1600(11-11-11), DDR3-1333(9-9-9), DDR3-1066(7-7-7)
3. Backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)
4. Backward compatible to DDR3-1066(7-7-7)
DDR3-1600 (11-11-11)3
K4B1G0446G-BCK0
K4B1G0846G-BCK0
DDR3-1866 (13-13-13)2
K4B1G0446G-BCMA
K4B1G0846G-BCMA
Package
78 FBGA
78 FBGA
2. Key Features
[ Table 2 ] 1Gb DDR3 G-die Speed bins
Speed
tCK(min)
CAS Latency
tRCD(min)
tRP(min)
tRAS(min)
tRC(min)
DDR3-800
6-6-6
2.5
6
15
15
37.5
52.5
DDR3-1066
7-7-7
1.875
7
13.125
13.125
37.5
50.625
DDR3-1333
9-9-9
1.5
9
13.5
13.5
36
49.5
DDR3-1600
11-11-11
1.25
11
13.75
13.75
35
48.75
DDR3-1866
13-13-13
1.07
13
13.91
13.91
34
47.91
Unit
ns
nCK
ns
ns
ns
ns
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin
900MHz fCK for 1866Mb/sec/pin
• 8 Banks
• Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
(DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE < 95 °C
• Asynchronous Reset
• Package : 78 balls FBGA - x4/x8
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks,
16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high
speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-
1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM fea-
tures such as posted CAS, Programmable CWL, Internal (Self) Calibration,
On Die Termination using ODT pin and Asynchronous Reset .
All of the control and address inputs are synchronized with a pair of exter-
nally supplied differential clocks. Inputs are latched at the crosspoint of dif-
ferential clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-
ion. The address bus is used to convey row, column, and bank address
information in a RAS/CAS multiplexing style. The DDR3 device operates
with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V VDDQ.
The 1Gb DDR3 G-die device is available in 78ball FBGAs(x4/x8).
NOTE : 1. This data sheet is an abstract of full DDR3 specification and does not cover the common features which are described in “DDR3 SDRAM Device Operation & Timing
Diagram”.
2. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.
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K4B1G0846G-BCH9The function is 1Gb G-die DDR3 SDRAM. SamsungSamsung

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