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Datasheet HY3506P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HY3506P | N-Channel Enhancement Mode MOSFET HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
Pin Description
100% avalanche tested
Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
G
D
G
S
D
S
TO-220
D
TO-247
Applications
• •
Switching appl | HOOYI | mosfet |
HY3 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HY3008B | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
2 | HY3008M | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
3 | HY3008P | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
4 | HY3008PM | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
5 | HY3008PS | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
6 | HY306-01 | HY306-01 HINGYIP data | | |
7 | HY30FR060P | FAST RECOVERY EPITAXIAL DIODE FAST RECOVERY EPITAXIAL DIODE
FEATURES
• UltraFast Recovery Time • Soft Recovery Characteristic • Low Forward Voltage • Low Recovery Loss • High Surge Current Capability • RoHS Compliant
APPLICATION • Converter, PFC • Freewheeling, Snubber • UPS, Plating Power Supply • Inversion HY diode | |
Esta página es del resultado de búsqueda del HY3506P. Si pulsa el resultado de búsqueda de HY3506P se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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