(PDF) AP01L60T Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP01L60T
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP01L60T RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement Description G D S BVDSS RDS(ON) ID 600V 12Ω 160mA Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for all commercial-industrial applications. G D S TO-92 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V ID@TA=100℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 600 ±30 160 100 300 0.83 -55 to 150 -55 to 150 Units V V mA mA mA W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient Value 150 Unit ℃/W Data & specifications subject to change without notice 1 200810225 1 page

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PDF AP01L60T Data sheet ( Hoja de datos )