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What is K15J50D?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "TK15J50D".


K15J50D Datasheet PDF - Toshiba Semiconductor

Part Number K15J50D
Description TK15J50D
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TK15J50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK15J50D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.33 Ω (typ.)
High forward transfer admittance: Yfs= 8.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
±30
15
60
210
360
15
21
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.0 ± 0.3
1.0
0.3
0.25
5.45 ± 0.2
5.45 ± 0.2
123
1: Gate
2: Drain (Heatsink)
3: Source
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.595
50
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.72 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
1 2011-04-25

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K15J50D equivalent
rth – tw
10
TK15J50D
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10μ
0.01
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.595°C/W
1m
10m
100m
1
10
Pulse width tw (s)
SAFE OPERATING AREA
100
ID max (pulse) *
ID max (continuous)
10
100 μs *
1 ms *
1 DC OPERATION
Tc = 25°C
0.1
0.01
* Single pulse Tc=25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 2.72 mH
Wave form
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2011-04-25


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Part NumberDescriptionMFRS
K15J50DThe function is TK15J50D. Toshiba SemiconductorToshiba Semiconductor

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