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PDF AP4430GEM Data sheet ( Hoja de datos )
| Número de pieza | AP4430GEM | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4430GEM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Low On-resistance
D
D
D
D
Description
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching,ruggedized device
design, ultra low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
4mΩ
20A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
30
±12
20
16
80
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200806053
1 page  
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8 7 65
1
2
34
e
B
E1
E
SYMBOLS
A
A1
B
C
D
E1
E
L
θ
e
Millimeters
MIN NOM MAX
1.35 1.55 1.75
0.10 0.18 0.25
0.33 0.41 0.51
0.19 0.22 0.25
4.80 4.90 5.00
3.80 3.90 4.00
5.80 6.15 6.50
0.38 0.71 1.27
0 4.00 8.00
1.27 TYP
A1
c
A
DETAIL A
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
4430GEM
YWWSSS
Part Number Package Code
meet Rohs requirement
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP4430GEM.PDF ] | |
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