DataSheet39.com

AP4435GM-HF-3 PDF Datasheet - Advanced Power Electronics

Part Number AP4435GM-HF-3
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturers Advanced Power Electronics 
Logo Advanced Power Electronics Logo 
Preview
Preview ( 5 pages )
		
AP4435GM-HF-3 datasheet, circuit
Advanced Power
Electronics Corp.
AP4435GM-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-resistance
D
BV DSS
Fast Switching Performance
RDS(ON)
RoHS-compliant, Halogen-free
G
ID
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP4435GM-HF-3 is in the SO-8 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8
-30V
20m
-9A
G
SS
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Rating
-30
±20
-9
-7.3
-50
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP4435GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200811216-3 1/5

1 page
line_dark_gray
AP4435GM-HF-3 pdf, schematic
Advanced Power
Electronics Corp.
AP4435GM-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A
VGS=-4.5V, ID=-5A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-7A
Drain-Source Leakage Current
VDS=-30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=±20V
ID=-7A
Gate-Source Charge
VDS=-24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-15V
Rise Time
ID=-1A
Turn-off Delay Time
RG=3.3, VGS=-10V
Fall Time
RD=15
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-2.1A, VGS=0V
IS=-7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-30 -
-V
- - 20 m
- - 32 m
-1 - -3 V
- 16 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 18 29 nC
- 3 - nC
- 10 - nC
- 8 - ns
- 6.6 - ns
- 44 - ns
- 34 - ns
- 1175 1690 pF
- 195 - pF
- 190 - pF
Min. Typ. Max. Units
- - -1.2 V
- 28 - ns
- 18 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width < 300µs , duty cycle < 2%
3.Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5

2 Page
line_dark_gray
AP4435GM-HF-3 equivalent
Advanced Power
Electronics Corp.
Package Dimensions: SO-8
D
8 7 65
1
2
34
E1
e
B
E
AP4435GM-HF-3
SYMBOLS
A
A1
B
C
D
E1
E
L
θ
e
Millimeters
MIN NOM MAX
1.35 1.55 1.75
0.10 0.18 0.25
0.33 0.41 0.51
0.19 0.22 0.25
4.80 4.90 5.00
3.80 3.90 4.00
5.80 6.15 6.50
0.38 0.71 1.27
0 4.00 8.00
1.27 TYP
A
A1
c
Marking Information:
DETAIL A
DETAIL A
L
θ
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
4435GM
YWWSSS
Product: AP4435
Package:
GM = RoHS-compliant halogen-free SO-8
Date/lot code (YWWSSS)
Y: Last digit of the year
WW: Work week
SSS: Lot code sequence
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
5/5

5 Page





Information Total 5 Pages
Download[ AP4435GM-HF-3.PDF Datasheet ]

Share Link :

Electronic Components Distributor

SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Element14 Chip One Stop



Featured Datasheets

Part NumberDescriptionManufacturers
AP4435GM-HF-3The function of this parts is a P-CHANNEL ENHANCEMENT MODE POWER MOSFET.Advanced Power Electronics
Advanced Power Electronics

Quick jump to:

AP44  1N4  2N2  2SA  2SC  74H  ADC  BC  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA 


DataSheet39.com is an Online Datasheet PDF Search Site.
It offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.



Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  SCR

www.DataSheet39.com    |   2018   |  Privacy Policy  |  Contact Us   |  New  |  Search