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PDF AP04N70BI-H-HF-3 Data sheet ( Hoja de datos )
| Número de pieza | AP04N70BI-H-HF-3 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP04N70BI-H-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
100% Avalanche Tested
Fast Switching Performance
RoHS-compliant, halogen-free
G
D
S
BV DSS
R DS(ON)
ID
700V
2.4Ω
4A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP04N70BI-H-HF-3 is in the TO-220CFM isolated through-hole package
which is widely used in commercial and industrial applications where a
small PCB footprint or an attached isolated heatsink is required.
This device is well suited for use in high voltage applications such as
off-line AC/DC converters.
G
DS
TO-220CFM (I)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
± 30
4
2.5
15
33
0.26
8
4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.8
65
Unit
°C/W
°C/W
Ordering Information
AP04N70BI-H-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcst/ ube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201008184-3 1/7
1 page  
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
16
14
12 I D =4A
10 VDS =320V
VDS =400V
8 VDS =480V
6
4
2
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
25
10000
100
1
1
AP04N70BI-H-HF-3
f=1.0MHz
Ciss
Coss
Crss
6 11 16 21 26 31
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
12 5
10
8
T j =150 o C
T j = 25 o C
6
4
2
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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