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PDF TPC8060-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8060-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8060-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8060-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 16 nC (typ.)
• Low drain-source ON-resistance:
RDS (ON) = 3.1 mΩ (typ.) (VGS = 4.5 V)
• High forward transfer admittance: |Yfs| = 63 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
18
72
1.9
1.0
110
18
2.0
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Downloaded from Elcodis.com electronic components distributor
1
2009-07-07
1 page  
RDS (ON) – Ta
8
Common source
Pulse test
6
ID = 4.5, 9, 18 A
4
VGS = 4.5 V
2
VGS = 10 V
ID = 4.5, 9, 18 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8060-H
100
10
IDR – VDS
4.5
3
10
1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
1
0 −0.2 −0.4
−0.6
−0.8
−1.0
Drain-source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10 100
Drain-source voltage VDS (V)
Vth – Ta
2.5
2
1.5
1
0.5
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.5
(2)
1.0
PD – Ta
(1)Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)Device mounted on a glass-epoxy
board (b) (Note 2b)
t=10s
0.5
0
0 40 80 120 160
Ambient temperature Ta (°C)
30
VDS
20
10
Dynamic input/output
characteristics
12
VDD = 6 V
12 V
24 V
8
Common source
ID = 18 A
Ta = 25°C
Pulse test
4
00
0 16 32 48 64 80
Total gate charge Qg (nC)
Downloaded from Elcodis.com electronic components distributor
5
2009-07-07
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8060-H.PDF ] | |
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