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PDF Si4802DY Data sheet ( Hoja de datos )
| Número de pieza | Si4802DY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 30-V (D-S) MOSFET
Si4802DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
30 0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
ID (A)
8.4
7.2
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4802DY
Si4802DY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
8.4 6.1
6.7 4.9
20
2.1 1.1
2.5 1.3
1.6 0.8
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71114
S-31989—Rev. C, 13-Oct-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
80
20
Maximum
50
95
25
Unit
_C/W
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Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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