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Número de pieza | APTGT150DH170 | |
Descripción | IGBT Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGT150DH170 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APTGT150DH170
Asymmetrical - Bridge
Trench + Field Stop IGBT®
Power Module
Q1
G1
VBUS
CR3
E1 OUT1 OUT2
CR2
Q4
0/VBUS
G4
E4
G1 VBUS
E1
OUT 1
0/VBUS
OUT2
E4
G4
VCES = 1700V
IC = 150A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
250
150
300
±20
890
300A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
1 page APTGT150DH170
Operating Frequency vs Collector Current
25
20
ZCS
15
ZVS
VCE=900V
D=50%
RG=4.7Ω
TJ=125°C
TC=75°C
10
5 hard
switching
0
0 40 80 120 160 200 240
IC (A)
Forward Characteristic of diode
300
250
TJ=25°C
200
150
100
50 TJ=125°C
TJ=125°C
0
0 0.5 1 1.5 2 2.5 3
VF (V)
0.3
0.25 0.9
0.2 0.7
0.15 0.5
0.1 0.3
0.05 0.1
0 0.05
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT150DH170.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGT150DH170 | IGBT Power Module | Advanced Power Technology |
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