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PDF APTGT150DH120G Data sheet ( Hoja de datos )
| Número de pieza | APTGT150DH120G | |
| Descripción | IGBT Power Module | |
| Fabricantes | Microsemi | |
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APTGT150DH120G
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
Q1
G1
VBUS
CR3
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
E1 OUT1 OUT2
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
Q4 - Low tail current
CR2
G4 - Switching frequency up to 20 kHz
- Soft recovery parallel diodes
E4 - Low diode VF
- Low leakage current
0/VBUS
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
OUT1 • High level of integration
G1 VBUS
E1
0/VBUS
Benefits
• Stable temperature behavior
E4 • Very rugged
G4 • Direct mounting to heatsink (isolated package)
OUT2 • Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
220
150
350
±20
690
300A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT150DH120G
Operating Frequency vs Collector Current
60
50
40 ZVS
30
ZCS
VCE=600V
D=50%
RG=2.2Ω
TJ=125°C
Tc=75°C
20
10 Hard
switc hing
0
0 40 80 120 160 200 240
IC (A)
Forward Characteristic of diode
300
250 TJ=25°C
200
150 TJ=125°C
100
50 TJ=125°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3 0.9
0.25
0.2
0.15
0.1
0.7
0.5
0.3
0.05
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Diode
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT150DH120G.PDF ] | |
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