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PDF 2SK2955 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2955 | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2955 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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2SK2955
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.010 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
REJ03G1055-0400
(Previous: ADE-208-564B)
Rev.4.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
G 2. Drain
(Flange)
3. Source
1
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 7
1 page  
2SK2955
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
10 V
5 V VGS = 0, –5 V
20
Maximum Avalanche Energy vs.
Channel Temperature Derating
200
IAP = 45 A
160 VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
120
80
10
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
40
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 1.25°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
L
IAP
Monitor
D. U. T
50 Ω
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.4.00 Sep 07, 2005 page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SK2955.PDF ] | |
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