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PDF TPC8045-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8045-H | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8045-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8045-H
Switching Regulator Applications
Motor Drive Applications
DC-DC Converter Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 23 nC (typ.)
• Low drain-source ON-resistance:
RDS (ON) = 2.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 67 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
40
40
±20
18
72
1.9
1.0
150
18
0.06
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-06-17
1 page  
RDS (ON) – Ta
6
Common source
Pulse test
5
ID = 4.5, 9, 18 A
4
3
VGS = 4.5 V
2
VGS = 10 V
1
ID = 4.5, 9, 18 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8045-H
1000
100 10
10
3
4.5
IDR – VDS
Common source
Ta = 25°C
Pulse test
2
1
VGS = 0 V
1
0.1
0
−0.2
−0.4 −0.6 −0.8
−1.0 −1.2
Drain-source voltage VDS (V)
10000
1000
Capacitance – VDS
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
2.5
2
1.5
1
0.5
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)Device mounted on a glass-epoxy
board (b) (Note 2b)
t=10s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
ID = 18 A
40
Ta = 25°C
Pulse test
30 VDS = 32 V
20 16
10 8
8
16
VDD = 32 V
VGS
20
16
12
8
4
00
0 40 80 120 160
Total gate charge Qg (nC)
5 2009-06-17
5 Page | ||
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| PDF Descargar | [ Datasheet TPC8045-H.PDF ] | |
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