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SMAJ
Transil™
Features
■ Peak pulse power:
– 400 W (10/1000 µs)
– 2.3 kW (8/20 μs)
■ Stand off voltage range: from 5 V to 188 V
■ Unidirectional and bidirectional types
■ Low leakage current:
– 0.2 μA at 25 °C
– 1 μA at 85 °C
■ Operating Tj max: 150 °C
■ High power capability at Tj max:
– 270 W (10/1000 µs)
■ JEDEC registered package outline
Complies with the following standards
■ IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ IEC 61000-4-5 (see Table 3 for surge level)
■ MIL STD 883G, method 3015-7 Class 3B
– 25 kV HBM (human body model)
■ Resin meets UL 94, V0
■ MIL-STD-750, method 2026 solderability
■ EIA STD RS-481 and IEC 60286-3 packing
■ IPC 7531 footprint
A
K
Unidirectional
Bidirectional
SMA
(JEDEC DO-214AC)
Description
The SMAJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are generally used against surges below
400 W (10/1000 μs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SMAJ are packaged in SMA (SMA footprint in
accordance with IPC 7531 standard).
July 2010
TM: Transil is a trademark of STMicroelectronics
Doc ID 5544 Rev 12
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www.st.com
10
SMAJ
Characteristics
Figure 6.
C(pF)
10000
1000
100
10
1
Junction capacitance versus
Figure 7.
reverse applied voltage for
unidirectional types (typical values)
SMAJ5.0A
SMAJ12A
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
C(pF)
10000
1000
SMAJ24A
SMAJ40A
SMAJ85A
100
VR(V)
10
SMAJ188A
100
1000
10
1
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
SMAJ5.0CA
SMAJ12CA
SMAJ24CA
SMAJ40CA
SMAJ85CA
VR(V)
10
SMAJ188CA
100 1000
Figure 8. Peak forward voltage drop
versus peak forward current
(typical values)
IFM(A)
1.0E+02
1.0E+01
Tj =125 °C
Figure 9. Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
Zth(j-a) / Rth(j-a)
1.00
Recommended pad layout
PCB FR4, copper thickness = 35 µm
1.0E+00
Tj =25 °C
0.10
1.0E-01
VFM(V)
1.0E-02
0.01
tP(s)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 10. Thermal resistance, junction to
ambient, versus copper surface
under each lead
Rth(j-a)(°C/W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0
PCB FR4, copper thickness = 35 µm
SCU(cm²)
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 11. Leakage current versus junction
temperature (typical values)
IR(nA)
1.E+03
1.E+02
VR=VRM
VRM < 10 V
1.E+01
1.E+00
1.E-01
25
VR=VRM
VRM ≥ 10 V
Tj(°C)
50 75 100 125 150
Doc ID 5544 Rev 12
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