(PDF) 2SK2957L Datasheet - Silicon N Channel MOS FET

Número de pieza	2SK2957L
Descripción	Silicon N Channel MOS FET
Fabricantes	Renesas
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No Preview Available ! 2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 1 2 3 123 S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Sep 07, 2005 page 1 of 7 1 page 2SK2957(L), 2SK2957(S) Reverse Drain Current vs. Source to Drain Voltage 50 40 10 V 30 5 V VGS = 0, –5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 Tc = 25°C 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 0.011shot pulse 0.01 10 µ 100 µ θch – c(t) = γ s (t) • θ ch – c θch – c = 1.67°C/W, Tc = 25°C PDM PW T D= PW T 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. Vout Monitor RL Vin 10 V 50 Ω VDD = 10 V Waveform 90% Vin Vout 10% 10% 10% td(on) 90% tr 90% td(off) tf Rev.4.00 Sep 07, 2005 page 5 of 7 5 Page

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PDF 2SK2957L Data sheet ( Hoja de datos )