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MDU1511 Datasheet PDF - MagnaChip

Part Number MDU1511
Description Single N-channel Trench MOSFET
Manufacturers MagnaChip 
Logo MagnaChip Logo 

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MDU1511
Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ
General Description
The MDU1511 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1511 is suitable device for DC/DC Converter
and general purpose applications.
Features
VDS = 30V
ID = 100A @VGS = 10V
RDS(ON)
< 2.4 m@VGS = 10V
< 3.3 m@VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Steady State
Thermal Resistance, Junction-to-Case
Steady State
May. 2011. Version 1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
100.0
94.0
36.1(3)
28.8(3)
100
78.1
50.0
5.5(3)
3.5(3)
287
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
22.7
1.6
Unit
oC/W
MagnaChip Semiconductor Ltd.

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MDU1511 equivalent
Package Dimension
PowerDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified
Dimension
A
b
C
D1
D2
E
E1
E2
e
H
K
L
α
MILLIMETERS
Min Max
0.90 1.10
0.33 0.51
0.20 0.34
4.50 5.10
- 4.22
5.90 6.30
5.50 6.10
- 4.30
1.27BSC
0.41 0.71
0.20 -
0.51 0.71
0° 12°
May. 2011. Version 1.2
5 MagnaChip Semiconductor Ltd.


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MDU1511 transistor mosfet


1. - 30V, N-Ch, MOSFET (Transistor)

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