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PDF TPCP8107 Data sheet ( Hoja de datos )
| Número de pieza | TPCP8107 | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8107
1. Applications
• Motor Drivers
• Mobile Equipment
2. Features
(1) Small, thin package
(2) Small gate charge: QSW = 14.0 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 13.9 mΩ (typ.) (VGS = -10 V)
(4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(5) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TPCP8107
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
PS-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -40 V
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1)
ID
IDP
-8 A
-32
Power dissipation
Power dissipation
Single-pulse avalanche energy
(t = 5 s)
(t = 5 s)
(Note 2)
(Note 3)
(Note 4)
PD
PD
EAS
2.01
1
145.8
W
W
mJ
Avalanche current
Channel temperature
Storage temperature
(Note 5)
IAR
Tch
Tstg
-8
175
-55 to 150
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2013-10-22
Rev.2.0
1 page  
8. Characteristics Curves (Note)
TPCP8107
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta (Note 8)
5 2013-10-22
Rev.2.0
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TPCP8107.PDF ] | |
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