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What is BUK7237-55A?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "N-channel TrenchMOS standard level FET".


BUK7237-55A Datasheet PDF - NXP Semiconductors

Part Number BUK7237-55A
Description N-channel TrenchMOS standard level FET
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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BUK7237-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 9 July 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 12;
see Figure 13
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13;
see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
ID = 14 A; Vsup 55 V;
RGS = 50 ; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 32.3 A
- - 77 W
- - 74 m
- 31 37 m
- - 49 mJ

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BUK7237-55A equivalent
NXP Semiconductors
BUK7237-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13; see Figure 12
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 ; VGS = 10 V;
RG(ext) = 10 ; Tj = 25 °C
from drain lead from package to centre
of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
IS = 15 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
55 - - V
50 - - V
234V
- - 4.4 V
1- - V
- 0.05 10 µA
- - 500 µA
- 2 100 nA
- 2 100 nA
- - 74 m
- 31 37 m
- 650 872 pF
- 170 205 pF
- 110 153 pF
- 10 - ns
- 62 - ns
- 24 - ns
- 20 - ns
- 2.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 40 - ns
- 80 - nC
BUK7237-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 July 2010
© NXP B.V. 2010. All rights reserved.
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