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PDF 2N7002PV Data sheet ( Hoja de datos )
| Número de pieza | 2N7002PV | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 5 August 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C;
VGS = 10 V;
ID = 500 mA
Min Typ Max Unit
- - 60 V
- - ±20 V
[1] - - 350 mA
- 1 1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
1 page  
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
10
0
0.02
0.01
017aaa064
1
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 4.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
017aaa065
0 0.02
10 0.01
1
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 5.
FR4 PCB, mounting pad for drain 1 cm2
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
2N7002PV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 6 leads
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
SOT666
DA
EX
S YS
65 4
HE
pin 1 index
12
e1 bp
e
3
wM A
A
detail X
c
Lp
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
bp
c
D
E
e e1 HE Lp
mm
0.6 0.27 0.18 1.7
0.5 0.17 0.08 1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
wy
0.1 0.1
OUTLINE
VERSION
SOT666
IEC
Fig 18. Package outline SOT666
2N7002PV
Product data sheet
REFERENCES
JEDEC
JEITA
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 August 2010
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
© NXP B.V. 2010. All rights reserved.
11 of 16
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