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PDF STT3810N Data sheet ( Hoja de datos )
| Número de pieza | STT3810N | |
| Descripción | N-Channel Enhancement Mode Mos.FET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
| Logotipo |  |
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Elektronische Bauelemente
STT3810N
6A , 20V , RDS(ON) 24.5 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
Battery Powered Instruments
Portable Computing
Mobile Phones
Fast switch
GPS Units and Media Players
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
TA= 25°C
TA= 100°C
TA= 25°C
TA= 100°C
VGS
ID
IDM
IS
PD
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t≦10 sec
Steady State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Ratings
20
±10
6
3.6
20
1
0.83
0.3
-55 ~ 150
110
150
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
13-Aug-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet STT3810N.PDF ] | |
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