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PDF CS213 Data sheet ( Hoja de datos )

Número de pieza CS213
Descripción Protection IC
Fabricantes Neotec 
Logotipo Neotec Logotipo



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No Preview Available ! CS213 Hoja de datos, Descripción, Manual

CS213
Protection IC for 1-Cell Battery Pack
Features
„ Detection Accuracy
ƒ Over-charge Detection: ±40mV
ƒ Over-discharge Detection: ±100mV
ƒ Discharge Over-current Detection: ±20mV
„ High Withstand Voltage
ƒ Absolute maximum ratings: 28V
(V- pin and CO pin)
„ Ultra Small Package
ƒ SOT-23-6
Description
The CS213 is the 1-cell protection IC for
lithium-ion/lithium-polymer rechargeable battery pack.
This protection IC was developed for use with
lithium-ion/lithium polymer 1-cell serial batteries.
It detects over-charge, over-discharge, discharge
over-current and other abnormalities, and functions to
protect the battery by turning off the external FETs.
The IC also has a built-in timer circuit (for detection
delay times), so fewer external parts can be used in
protection circuit configuration.
The tiny package is especially suitable for compact
portable device, i.e. slim mobile phone and Bluetooth
earphone.
Application
„ Mobile phone battery packs
„ Digital camera battery packs
„ Bluetooth earphone Li-ion battery module
Typical Application Circuit
Neotec Semiconductor Ltd.
www.neotec.com.tw
1/13
CS213DS V1.5 2014/07/18
The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec.

1 page




CS213 pdf
CS213
Test Circuits
„ Over-charge, over-discharge and the release detection voltages (test circuit 1)
1) Set V1=3.5V, V2=0V, S1=ON, then CS213 series enter operating mode.
2) Increase V1 voltage (from 3.5V) gradually. The V1 voltage is the over-charge detection voltage (VDET1)
when CO pin goes low (from high).
3) Decrease V1 gradually. The V1 voltage is the over-charge release detection voltage (VREL1) when CO
pin goes high again.
4) Continue decreasing V1. The V1 voltage is the over-discharge detection voltage (VDET2) when DO pin
goes low. Then increase V1 gradually. The V1 voltage is the over-discharge release detection voltage
(VREL2), when DO pin returns to high.
Note: The over-charge and over-discharge release voltages are defined in versions.
„ Discharge over-current detection voltage (test circuit 1)
1) Set V1=3.5 V, V2=0V, S1=ON and CS213 series enter operating condition.
2) Increase V2 (from 0V) gradually. The V2 voltage is the discharge over-current detection voltage (VDET3)
when DO pin goes low (from high).
„ Load short-circuiting detection voltage (test circuit 1)
1) Set V1=3.5V, V2=0V, S1=ON and CS213 series enter operating condition.
2) Increase V2 immediately (within 10uS) till DO pin goes “low” from high with a delay time which is
between the minimum and the maximum of Load short-circuiting delay time.
„ Over-charge, over-discharge delay time (test circuit 1)
1) Set V1=3.5V, V2=0V, S1=ON to enter operating condition.
2) Increase V1 from VDET1-0.2V to VDET1+0.2V immediately (within 10us). The over-charge detection delay
time (tVDET1) is the period from the time V1 gets to VDET1+0.2V till CO pin switches from high to low.
3) Set V1=3.5V, V2=0V, S1=ON and S2 = OFF to enter operating condition.
4) Decrease V1 from VDET2+0.2V to VDET2-0.2V immediately (within 10us). The over-discharge detection
delay time (tVDET2) is the period from the time V1 gets to VDET2-0.2V till DO pin switches from high to low.
„ Discharge over-current delay time (test circuit 1)
1) Set V1=3.5V, V2=0V, S1=ON to enter operating condition.
2) Increase V2 from 0V to 0.25V immediately (within 10us). The discharge over-current detection delay
time (tVDET3) is the period from the time V2 gets to 0.25V till DO pin switches from high to low.
„ Load short-circuiting delay time (test circuit 1)
1) Set V1=3.5V, V2=0V, S1=ON to enter operating condition.
2) Increase V2 from 0V to 1.6V immediately (within 10us). The Load short-circuiting detection voltage delay
time (tSHORT) is the period from the time V2 gets to 1.6V till DO pin switches from high to low.
„ Operating current consumption (test circuit 2)
1) Set V1=3.5V, V2=0V and S1=ON to enter operating condition and measure the current I1. I1 is the
operating condition current consumption (IDD).
„ 0V battery charge starting charger voltage (test circuit 3)
1) Set V1=V2=0V, increase V2 gradually.
2) The V2 voltage is the 0V charge starting voltage (V0CHA) when CO pin switches from low to high (V V- +
0.1V or higher).
Recommended:
1) '0 V charge available' doesn't means CS213 can recover the zero-V cell to be full charged if this cell has
been already damaged due to too low voltage.
2) For safety consideration, we strongly recommended to select '0 V charge inhibition' to prevent from
charging a damaged cell.
Neotec Semiconductor Ltd.
www.neotec.com.tw
5/13
CS213DS V1.5 2014/07/18
The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec.

5 Page





CS213 arduino
Recommended Application Circuit
CS213
Table1 Constant for external components
Symbol Parts
Purpose
Recommended
Min.
FET1
N channel
MOSFET
Discharge control
-
-
FET2
N channel
MOSFET
Charge control
R1
Resistor
ESD protection,
for power fluctuation
C1 Capacitor For power fluctuation
R2
Resistor
Protection for reverse
connection of a charger
-
470
0.1uF
1K
-
100
0.022uF
300
Max.
-
-
1K
1.0uF
2K
Remarks
*1) 0.4 V < Threshold voltage <
Over-discharge detection voltage.
Gate to source withstand voltage >
Charger voltage.
*1) 0.4 V < Threshold voltage <
Over-discharge detection voltage.
Gate to source withstand voltage >
Charger voltage.
*2) Set Resistance to the value 2R1<
R2.
*3) Install a 0.022uF capacitor or higher.
*4) The resistor is preventing big
current when a charger is connected in
reverse.
Neotec Semiconductor Ltd.
www.neotec.com.tw
11/13
CS213DS V1.5 2014/07/18
The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec.

11 Page







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