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PDF 2N7002P Data sheet ( Hoja de datos )
| Número de pieza | 2N7002P | |
| Descripción | 360mA N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
AEC-Q101 qualified
Logic-level compatible
Trench MOSFET technology
Very fast switching
1.3 Applications
High-speed line driver
Low-side loadswitch
Relay driver
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tamb = 25 °C
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
VGS = 10 V; Tamb = 25 °C
[1]
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 500 mA;
Tj = 25 °C; pulsed; tp ≤ 300 µs;
δ ≤ 0.01
Min Typ Max Unit
- - 60 V
-20 -
20 V
- - 360 mA
- 1 1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
1 page  
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
gfs forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 10 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VDS = VGS; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; ID = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
VGS = 10 V; ID = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
VDS = 10 V; ID = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
ID = 300 mA; VDS = 30 V; VGS = 4.5 V;
Tj = 25 °C
VGS = 0 V; VDS = 10 V; f = 1 MHz;
Tj = 25 °C
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = 115 mA; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
60 - - V
1.1 1.75 2.4 V
- - 1 µA
- - 10 µA
- - 100 nA
- - 100 nA
-
1.3 2
Ω
- 1 1.6 Ω
- 400 - mS
- 0.6 0.8 nC
- 0.2 - nC
- 0.2 - nC
- 30 50 pF
- 7 - pF
- 4 - pF
- 3 6 ns
- 4 - ns
- 10 20 ns
- 5 - ns
0.47 0.75 1.1 V
2N7002P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
3.3
2.9
1.9
2N7002P
60 V, 360 mA N-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
2N7002P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
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