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Número de pieza | TSD1858 | |
Descripción | Low Vcesat NPN Transistor | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSD1858 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! TSD1858
Low Vcesat NPN Transistor
TO-251
(IPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
180V
160V
1.5A
0.3V @ IC = 1A, IB = 100mA
Features
Ordering Information
● Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.)
● High BVCEO
Structure
Part No.
Package
Packing
TSD1858CH C5G
TO-251
75pcs / Tube
Note: “G” denote for Halogen Free Product
● Epitaxial Planar Type
● NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @ TA=25 oC
Power Dissipation @ TC=25 oC
DC
Pulse
VCBO
VCEO
VEBO
IC
PD
PD
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw≤380us, Duty≤2%
TJ
TSTG
Limit
180
160
5
1.5
3 (note1)
1
15
125
8.33
+150
- 55 to +150
Unit
V
V
V
A
W
W
oC/W
oC/W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage IC = 1mA, IE = 0
BVCBO 180 -- -- V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0
BVCEO 160 -- -- V
Emitter-Base Breakdown Voltage
IE = 50uA, IC = 0
BVEBO 5 -- -- V
Collector Cutoff Current
VCB = 160V, IE = 0
ICBO -- -- 1 uA
Emitter Cutoff Current
VEB = 4V, IC = 0
IEBO -- -- 1 uA
Collector-Emitter Saturation Voltage IC= 1A, IB = 100mA
VCE(SAT)
-- 0.15 0.3
V
Base-Emitter Saturation Voltage
VCE = 5V, IC = 5mA
VBE(ON) -- -- 0.8 V
DC Current Transfer Ratio
VCE = 5V, IC = 200mA
VCE = 5V, IC = 500mA
hFE 1
hFE 2
180 -- 390
30 --
--
Transition Frequency
VCE =5V, IE=150mA,
f=100MHz
fT -- 200 -- MHz
Output Capacitance
VCB = 10V, f=1MHz
Note: Pulse test: pulse width ≤380uS, Duty cycle≤2%
Cob -- 13 -- pF
1/4 Version: E11
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet TSD1858.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSD1858 | Low Vcesat NPN Transistor | Taiwan Semiconductor |
TSD1858CH | Low Vcesat NPN Transistor | Taiwan Semiconductor |
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