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C6012 Datasheet PDF - Panasonic Semiconductor

Part Number C6012
Description 2SC6012
Manufacturers Panasonic Semiconductor 
Logo Panasonic Semiconductor Logo 



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C6012 datasheet, circuit
Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide safe oeration area
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 700
1 700
7
3
15
24
60
3
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
A
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open) *
Forward voltage *
Collector-base cutoff current (Emitter open)
VEBO
VF
ICBO
Forward current transfer ratio *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
Storage time
Fall time
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
IE = 750 mA, IC = 0
IF = 7.0 A
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VCE = 5 V, IC = 7.0 A
IC = 7.0 A, IB = 1.75 A
IC = 7.0 A, IB = 1.75 A
VCE = 10 V, IC = 0.5 A, f = 0.5 MHz
IC = 7.0 A, Resistance loaded
IB1 = 1.75 A, IB2 = −3.5 A
7V
2 V
50 µA
1 mA
7 12
3.0 V
1.5 V
2.1 MHz
5.0 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: July 2004
SJD00321AED
1

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