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PDF ME60N03 Data sheet ( Hoja de datos )
| Número de pieza | ME60N03 | |
| Descripción | 30V N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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30V N-Channel Enhancement Mode MOSFET
VDS=30V
RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ
FEATURES
Advanced trench process technology
High density cell design for ultra low on-resistance
Specially designed for DC/DC converters and motor drivers
Fully characterized avalanche voltage and current
PIN CONFIGURATION
(TO-252)
Top View
ME60N03
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse(L=0.5mH,Rg=25Ω)
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
EAS
RθJA
RθJC
Limit
30
±20
50
100
50
23
-55 to 150
110
T≦10 sec
Steady State
20
15
40
Unit
V
V
A
A
W
℃
mJ
℃/W
℃/W
Apr, 2007 – Version 4.1
01
1 page  
30V N-Channel Enhancement Mode MOSFET
ME60N03
TO-252 Package Outline
Apr, 2007 – Version 4.1
SYMBOL
A
A1
B
B1
B2
C
D
D2
D3
H
E
E2
L
L1
L2
L3
P
MILLIMETERS (mm)
MIN MAX
2.00
2.50
0.90
1.30
0.50
0.85
0.50
0.80
0.50
1.00
0.40
0.60
5.20
5.70
6.50
7.30
2.20
3.00
9.50
10.50
6.30
6.80
4.50
5.50
1.30
1.70
0.90
1.70
0.50
1.10
0 0.30
2.00
2.80
05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ME60N03.PDF ] | |
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