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PDF FGA60N65SMD Data sheet ( Hoja de datos )
| Número de pieza | FGA60N65SMD | |
| Descripción | 60A Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2013
FGA60N65SMD
650 V, 60 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• Fast Switching : EOFF = 7.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
1
C
G
E
Ratings
650
± 20
± 30
120
60
180
60
30
180
600
300
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
7000
6000
5000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
4000
3000
Cies
2000
1000
0
0.1
Coes
Cres
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 9. Turn-on Characteristics vs.
Gate Resistance
100
80
tr
60
40
20
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 11. Switching Loss vs.
Gate Resistance
10
Eon
1
0.1
0
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 200V
300V
400V
6
3
0
0 40 80 120 160 200
Gate Charge, Qg [nC]
Figure 9. Turn-off Characteristics vs.
Gate Resistance
6000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
td(off)
100
tf
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 12. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25oC
100 TC = 175oC
tr
td(on)
10
1
0 30 60 90 120
Collector Current, IC [A]
©2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA60N65SMD.PDF ] | |
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