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PDF D8213 Data sheet ( Hoja de datos )
| Número de pieza | D8213 | |
| Descripción | Dual High-Efficiency PWM Step-Down DC-DC Converter | |
| Fabricantes | iDESYN | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D8213 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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iDESYN
D8213
Dual High-Efficiency
PWM Step-Down DC-DC Converter
General Description
The i D8213 is a dual high efficiency Pul se Width
Modulated ( PWM) step-down DC-DC c onverter. I t i s
capable o f delivering 1. 2A output curr ent o ver a w ide
input v oltage range f rom 2.6V t o 5.5V, t he i D8213 is
ideally s uited for port able electronic de vices that are
powered f rom 1-cell Li-ion battery or from ot her power
sources w ithin the range such as cel lular phones ,
PDAs and other handheld devices.
Two operat ional m odes are a vailable: PWM/Low-
Dropout auto-switch and shutdown m odes. Internal
synchronous rect ifier wi th low RDS(ON) dramatically
reduces conduct ion loss at P WM mode. No external
Schottky diode is required in practical application.
The i D8213 ent ers Low -Dropout mode w hen norm al
PWM cannot pro vide regulated out put voltage by
continuously t urning on t he upper PMOS. The iD8213
enter shutdo wn m ode and consum es less than 0. 1 A
when EN pin is pulled low.
The s witching ripple is easily smoothed-out by s mall
package fi ltering e lements due to a fixed operation
frequency of 1.5MHz. This along with small TDFN-12L
and T DFN-10 pac kage pr ovides small PCB ar ea
application. O ther f eatures i nclude soft start, l ower
internal r eference voltage w ith 3% accurac y, over
temperature protection, and over current protection.
Ordering Information
iD8213 -
Taping
Package R: Tape and Reel
FEC:TDFN-12L (3x3)
FEA:TDFN-10 (3x3)
Output Voltage Voltage Code
Adjustable
AD
Applications
Mobile Phones
Personal Information Appliances
Wireless and DSL Modems
MP3 Players
Portable Instruments
Features
2.6V to 5.5V Input Range
Adjustable Output Voltage
1.2A Output Current per Channel
95% Efficiency
No Schottky Diode Required
40 A Quiescent Current per Channel
1.5MHz Fixed-Frequency PWM Operation
Small TDFN-12 and TDFN-10 Package
RoHS Compliant and Green
Marking Information
For marking information, please contact our sales
representative directly or through distributor around
your location.
Jan. 2014
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1 page  
iDESYN
iD8213
Electrical Characteristics
(VIN = 3.6V, VOUT = 2.5V, VREF = 0.6V, L = 2.2uH, CIN = 4.7uF, COUT = 10uF, TA = 25°C, IMAX= 1.2A unless otherwise specified)
Parameters
Channel 1 and Channel 2
Input Voltage Range
Input UVLO
Input Supply Current
Input Shutdown Current
FB Feedback Voltage
FB Input Current
Output Voltage Range
Load Regulation
Line Regulation
Switching Frequency
NMOS Switch On Resistance
PMOS Switch On Resistance
PMOS Switch Current Limit
SW Leakage Current
EN Input Current
EN Input Low Voltage
EN Input High Voltage
Condition
Min Typ Max Units
Rising, Hysteresis=90mV
VFB =0.65V
2.6
VIN=2.6 to 5.5V
0.582
VOUT=1.8V, IOUT From 0.2A to
0.4A
VIN=2.6 to 5.5V
0.6
ISW=200mA
ISW=200mA
VIN=5.5V,VSW=0 or 5.5V,EN=
GND
1.5
0.4
2.31
40
0.6
0.01
0.1
0.2
1.5
200
280
5.5
2.45
70
1
0.618
VIN
V
V
A
A
V
A
V
%
%/V
MHz
A
10 A
1A
V
1.5 V
Jan. 2014
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iDESYN
iD8213
Layout Considerations
When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the
iD8213. These items are also illustrated graphically in layout diagram. Check the following in your layout:
1. The power traces, consisting of the GND trace, the SW trace and the IN trace should be kept short, direct and
wide.
2. Does the FB pin connect directly to the VOUT?
The R1 resistance must be connected between the (+) plate of COUT1.
The R3 resistance must be connected between the (+) plate of COUT2.
3. Does the (+) plate of CIN connect to IN pin as closely as possible?
This capacitor avoided the AC current to the internal power MOSFETs.
4. Keep the switching node “SW” away from the sensitive FB node.
5. Keep the (–) plates of CIN1 and COUT1 as close as possible.
6. Keep the (–) plates of CIN2 and COUT2 as close as possible.
The resistor divider, R1 and R2,
must be connected between the
(+) plate of COUT and a ground line
terminated near GND.
FB node copper area
should be minimized
and keep far away
from noise sources
(SW, IN).
R2 R1 CR1 EN1 1
FB1 2
CIN must be placed
between IN and GND
as closer as Possible.
IN2 3
CIN1
GND2 4
SW2 5
L2
COUT must be
near iD8255.
COUT1
iD8213
L1
10 SW1
SW should be connected
to Inductor by wide and
short trace, keep
sensitive compontents
away from this trace.
GND
9 GND1
8 IN1
CIN2
7 FB2
6 EN2
CR3 R3 R4
Top layer
Bottom layer
COUT2
The exposed pad and GND
should be connected to a strong
ground plane for heat sinking
and noise prevention.
TDFN-10 Package
Jan. 2014
11
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11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet D8213.PDF ] | |
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