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What is 160N75F3?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel MOSFET".


160N75F3 Datasheet PDF - STMicroelectronics

Part Number 160N75F3
Description N-channel MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB160N75F3
STP160N75F3 - STW160N75F3
N-channel 75V - 3.5m- 120A - TO-220 - TO-247 - D2PAK
MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
STB160N75F3
VDSS
75V
STP160N75F3
75V
STW160N75F3
75V
1. Current limited by package
Ultra low on-resistance
100% Avalanche tested
RDS(on)
4.2m
4.5m
4.5m
ID
120A (1)
120A (1)
120A (1)
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “Single Feature
Size™“strip-based process with less critical
alignment steps and therefore a remarkable
manufacturing reproducibility. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and low gate charge.
Applications
Switching application
3
2
1
TO-220
TO-247
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB160N75F3
STP160N75F3
STW160N75F3
Marking
160N75F3
160N75F3
160N75F3
Package
D²PAK
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
February 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1/13
www.st.com
13
http://www.Datasheet4U.com

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160N75F3 equivalent
STB160N75F3 - STP160N75F3 - STW160N75F3
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=35 V, ID= 60A,
RG=4.7Ω, VGS=10V,
(see Figure 4)
Min. Typ. Max. Unit
Tbd ns
Tbd ns
Tbd ns
Tbd ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A, VGS=0
ISD=120A, di/dt =
100A/µs, VDD=30 V,
Tj=150°C
(see Figure 3)
1. Pulse with limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
120 A
480 A
1.5 V
75 ns
195 nC
5A
5/13


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Featured Datasheets

Part NumberDescriptionMFRS
160N75F3The function is N-channel MOSFET. STMicroelectronicsSTMicroelectronics

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