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What is STB24NM60N?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "Power MOSFET ( Transistor )".


STB24NM60N Datasheet PDF - STMicroelectronics

Part Number STB24NM60N
Description Power MOSFET ( Transistor )
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB24NM60N
N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET
D²PAK
Features
Order codes
STB24NM60N
VDSS
(@Tjmax)
650 V
RDS(on)
max.
< 0.19 Ω
ID
17 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
These N-channel 600 V Power MOSFET devices
are made using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a new vertical structure to
the company’s strip layout to yield one of the
world’s lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converter.
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STB24NM60N
Marking
24NM60N
3
!-V
Package
D²PAK
Packaging
Tape and reel
February 2011
Doc ID 010008 Rev 1
1/15
www.st.com
15
http://www.Datasheet4U.com

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STB24NM60N equivalent
STB24NM60N
Table 7. Switching times
Symbol
Parameter
td(on)
tr(v)
td(off)
tf(i)
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
Electrical characteristics
Test conditions
VDD = 300 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
Min. Typ. Max Unit
11.5 ns
16.5 ns
--
73 ns
37 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 17 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
17 A
-
68 A
- 1.6 V
340
- 4.6
27
ns
µC
A
404
- 5.7
28
ns
µC
A
Doc ID 010008 Rev 1
5/15


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STB24NM60N electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
STB24NM60NThe function is Power MOSFET ( Transistor ). STMicroelectronicsSTMicroelectronics

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