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What is Si7856ADP?

This electronic component, produced by the manufacturer "Vishay Siliconix", performs the same function as "N-Channel 30-V (D-S) MOSFET".


Si7856ADP Datasheet PDF - Vishay Siliconix

Part Number Si7856ADP
Description N-Channel 30-V (D-S) MOSFET
Manufacturers Vishay Siliconix 
Logo Vishay Siliconix Logo 


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N-Channel 30-V (D-S) MOSFET
Si7856ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)I
0.0037 at VGS = 10 V
30
0.0048 at VGS = 4.5 V
D (A)
25
23
Qg (Typ.)
39
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7856ADP-T1
Si7856ADP-T1-E3 (Lead (Pb)-free)
Si7856ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free available
• TrenchFET® Power MOSFET
Available
• Optimized for “Low Side” Synchronous
RoHS*
Rectifier Operation
COMPLIANT
• New Low Thermal Resistance PowerPAK® Package with
Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• DC/DC Converters
• Synchronous Rectifiers
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
25
20
15
12
Pulsed Drain Current (10 µs Pulse Width)
IDM 60
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
4.5 1.6
5.4 1.9
3.4 1.2
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter Sym
bol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t 10 s
Steady State
RthJA
18
50
23
65 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.5
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 73157
S-80438-Rev. C, 03-Mar-08
www.vishay.com
1
http://www.Datasheet4U.com

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Si7856ADP equivalent
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
Si7856ADP
Vishay Siliconix
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintain s worldwide manu facturing capa bility. Products may b e manu factured at on e of severa l qua lified lo cations. Reliability d ata for S ilicon
Technology and Pa ckage Reliability rep resent a co mposite of all qu alified locat ions. For rela ted documents such as package/ tape drawings, p art ma rking, and
reliability data, see http://www.vishay.com/ppg?73157.
Document Number: 73157
S-80438-Rev. C, 03-Mar-08
www.vishay.com
5


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Featured Datasheets

Part NumberDescriptionMFRS
Si7856ADPThe function is N-Channel 30-V (D-S) MOSFET. Vishay SiliconixVishay Siliconix

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