PDF IXYB82N120C3H1 Data sheet ( Hoja de datos )

Número de pieza	IXYB82N120C3H1
Descripción	High-Speed IGBT
Fabricantes	IXYS Corporation
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No Preview Available ! 1200V XPT TM IGBT GenX3TM w/ Diode IXYB82N120C3H1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C (Chip Capability) Lead Current Limit TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C 164 160 82 42 320 41 800 ICM = 164 ≤@VCE VCES 1040 -55 ... +150 150 -55 ... +150 A A A A A A mJ A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 30..120 / 6.7..27 N/lb. 10 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 82A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 μA 3 mA ±100 nA 2.75 3.50 3.20 V V VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 82A 3.2V 93ns PLUS264TM G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features z Optimized for Low Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100355E(6/13) http://www.Datasheet4U.com 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 7 Eoff Eon - - - - TJ = 125ºC , VGE = 15V 6 VCE = 600V 5 I C = 80A 4 3 2 I C = 40A 1 0 2 4 6 8 101 21 41 61 RG - Ohms 16 14 12 10 8 6 4 2 0 8 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 25 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff Eon - - - - RG = 2Ω , VGE = 15V VCE = 600V I C = 80A I C = 40A 50 75 TJ - Degrees Centigrade 100 9 8 7 6 5 4 3 2 1 125 Fig. 16. Inductive Turn-off Switching T imes vs. Collector Curre nt 280 240 t f i td(off) - - - - 240 RG = 2Ω , VGE = 15V 230 VCE = 600V 200 220 160 210 TJ = 125ºC 120 200 80 TJ = 25ºC 40 190 180 0 170 40 50 60 70 80 90 100 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved IXYB82N120C3H1 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 40 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Eoff Eon - - - - RG = 2Ω , VGE = 15V VCE = 600V TJ = 125ºC TJ = 25ºC 50 60 70 80 90 IC - Amperes 10 9 8 7 6 5 4 3 2 1 100 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 200 780 180 t f i td(off) - - - - TJ = 125ºC, VGE = 15V 160 VCE = 600V 700 620 140 I C = 40A 120 540 460 100 380 80 300 I C = 80A 60 220 40 140 2 4 6 8 10 12 14 16 18 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 240 280 t f i td(off) - - - - 200 RG = 2Ω , VGE = 15V VCE = 600V 260 160 240 I C = 40A 120 220 80 I C = 80A 200 40 180 0 160 25 50 75 100 125 TJ - Degrees Centigrade 5 Page

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