|
|
PDF D600 Data sheet ( Hoja de datos )
| Número de pieza | D600 | |
| Descripción | NPN Transistor - 2SD600 | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
|
1. D600  Hay una vista previa y un enlace de descarga de D600 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High
current 1A.
· Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
( ) : 2SB631, 631K
1 : Emitter
2 : Collector
3 : Base
Specifications
JEDEC : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Pal rameter
CoVllector-to-Base Voltage
CoVllector-to-Emitter Voltage
EmV itter-to-Base Voltage
CoI llector Current
CoI llector Current (Pulse)
CoPllector Dissipation
Sysmbo
CBO
CEO
EBO
C
CP
C
Juj nction Temperature
Stgorage Temperature
T
Tst
Electrical Characteristics at Ta = 25˚C
C0ondition
Tc=25˚C
2SKB631, D60
(0–)100
(0–)100
2tSB631K, D600
Uni
(–V)12
(–V)12
(V–)5
(A–)1
(A–)2
1W
8W
150 ˚C
–55 to +150 ˚C
Pal rameter
CoVllector-to-Base Breakdown Voltage
CoVllector-to-Emitter Brakdown Voltage
EmV itter-to-Base Breakdown Voltage
CoI llector Cutoff Current
EmI itter Cutoff Current
Sysmbo
Condition
(BR)CBO IC=(–)10µA, IE=0
(BR)CEO IC=(–)1mA, RBE=∞
(BR)EBO
CBO
EBO
IE=(–)10µA, IC=50
VCB=(–)50V, IE=10
VEB=(–)4V, IC=10
B6031, D600
B6031K, D600K
B6031, D600
B6031K, D600K
mipn
(V–)10
(V–)12
(V–)10
(V–)12
(V–)
Ratings
txy
ma
(A–)
(A–)
Unit
µ
µ
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4
http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet D600.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| D600 | NPN Transistor - 2SD600 | Sanyo Semicon Device |
| D6002 | Radio Controlled Receiver IC |  Shaoxing Silicore Technology |
| D600K | NPN silicon |  Fgx |
| D6015L | Thyristors |  Littelfuse |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |