(PDF) MFIRF13N50 Datasheet - Power MOSFET ( Transistor )

Número de pieza	MFIRF13N50
Descripción	Power MOSFET ( Transistor )
Fabricantes	Global Semiconductor
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No Preview Available ! MFIRF13N50 MCIRF13N50 ID = 13A VDS = 500V RDS(on)MAX = 0.48Ω Major Ratings and Characteristics Characteristics Values Units ID 13 A IDM 50 A VDS 500 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MFIRF13N50 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. ● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant Case Styles Ordering Information Part Number MCIRF13N50 MFIRF13N50 1、 GATE 2、 DRAIN 3、 SOURCE Package TO-220 TO-220F 1、 GATE 2、 DRAIN 3、 SOURCE Packaging Tube Tube 1 of 7 http://www.Datasheet4U.com 1 page Characteristics Curve MFIRF13N50 MCIRF13N50 Figure7.Gate Charge Waveform Figure8.Source-Drain Diode Forward Voltage Figure9.Breakdown Voltage Vs Junction Temperature www.globalsemi-group.com 5 of 7 5 Page

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PDF MFIRF13N50 Data sheet ( Hoja de datos )