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PDF IRF13N50 Data sheet ( Hoja de datos )
| Número de pieza | IRF13N50 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Nell | |
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SEMICONDUCTOR
IRF13N50 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(14A, 500Volts)
DESCRIPTION
The Nell IRF13N50 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
SMPS, UPS, convertors, motor drivers and drivers for high
power bipolar switching transistors requiring high speed
and low gate drive power.
These transistors can be operated directly from
integrated circuits.
D
GDS
TO-220AB
(IRF13N50A)
D (Drain)
FEATURES
RDS(ON) = 0.45Ω @ VGS = 10V
Ultra low gate charge(81nC max.)
Low reverse transfer capacitance
(CRSS = 11pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
14
500
0.45 @ VGS = 10V
81
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
ID
IDM
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
TJ=25°C to 150°C
RGS=20KΩ
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IAR
EAR
EAS
dv/dt
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
IAR=14A, RGS=50Ω, VGS=10V
IAS=14A, L=5.7mH
PD Total power dissipation
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD=50V, L=5.7mH, IAS=14A, RG=25Ω, dV/dt=7.6 V/ns, starting TJ=25˚C
3.ISD ≤ 14A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
www.nellsemi.com
Page 1 of 7
VALUE
500
500
±30
14
9.1
56
14
25
560
9.2
250
1.9
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W
W /°C
ºC
lbf.in (N.m)
http://www.Datasheet4U.com
1 page  
SEMICONDUCTOR
IRF13N50 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
Single pulse
(Thermal response)
0.0001
0.001
PDM
t1
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
t2
0.01
0.1
Rectangular Pulse Duration , t1 (seconds)
1
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- VDD
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
VDS
L
RG
20V
tP
D.U.T.
lAS
0.01Ω
15 V
+
- VDD
A
BVDSS
lAS
VDD
Vary tp to obtain required IAS
lD(t)
tp
VDS(t)
Time
www.nellsemi.com
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF13N50.PDF ] | |
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