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2N3905 Datasheet PDF - NTE

Part Number 2N3905
Description Silicon PNP Transistor
Manufacturers NTE 
Logo NTE Logo 



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2N3905 datasheet, circuit
2N3905 & 2N3906
Silicon PNP Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total
DDeveircaeteDAisbsoipvaeti2o5n5(CTA.
=
..
+255C),
.......
.P.D.
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. . 625mW
5.0mW/5C
Total Device Dissipation (TA = +605C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Total
DDeveircaeteDAisbsoipvaeti2o5n5(CTC.
=
..
.+.2.5.5.C.).,.P. D. .
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. . . . 1.5W
12mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
IBL
IC = 1mA, IB = 0, Note 1
IC = 105 A, IE = 0
IE = 105 A, IC = 0
VCE = 30V, VEB = 3V
VCE = 30V, VEB = 3V
DC Current Gain
2N3905
hFE VCE = 1V, IC = 0.1mA
2N3906
2N3905
2N3906
VCE = 1V, IC = 1mA
Min Typ Max Unit
40 − −
40 − −
5−−
− − 50
− − 50
V
V
V
nA
nA
30
60
40
80
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
50 150
100 300
30 − −
60 − −
15 − −
30 − −
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
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