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Número de pieza | MTNN8453KQ8 | |
Descripción | Asymmetric Dual N-Channel Enhancement Mode MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTNN8453KQ8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C560Q8
Issued Date : 2012.04.30
Revised Date :
Page No. : 1/12
Asymmetric Dual N-Channel Enhancement Mode MOSFET
MTNN8453KQ8 BVDSS
ID
RDSON(TYP.)@VGS=10V
RDSON(TYP.)@VGS=4.5V
FET1
30V
6.8A
15mΩ
23mΩ
FET 2
30V
8.9A
15mΩ
23mΩ
Description
The MTNN8453KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use
in DC-DC converters. A Schottky diode in parallel with the synchronous MOSFET to boost efficiency
further.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTNN8453KQ8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTNN8453KQ8
CYStek Product Specification
http://www.Datasheet4U.com
1 page CYStech Electronics Corp.
Spec. No. : C560Q8
Issued Date : 2012.04.30
Revised Date :
Page No. : 5/12
Typical Characteristics(Cont.) : FET 1
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01 0.1 1 10
ID, Drain Current(A)
100
Gate Charge Characteristics
10
VDS=12V
8 VDS=15V
VDS=24V
6
4
2 ID=6A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
100
RDSON
Limite
Maximum Safe Operating Area
100μs
10
1
0.1
TA=25°C, Tj=150°C
VGS=10V, θJA=104°C/W
Single Pulse
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100
8
7
6
5
4
3
2
1
0
25
1
D=0.5
Transient Thermal Response Curves
Maximum Drain Current vs Case Temperature
TA=25°C
VGS=10V
RθJA=104°C/W
50 75 100 125 150
Tj, Junction Temperature(°C)
175
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=104°C/W
0.001
1.E-04
MTNN8453KQ8
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet MTNN8453KQ8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTNN8453KQ8 | Asymmetric Dual N-Channel Enhancement Mode MOSFET | CYStech Electronics |
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