|
|
Datasheet 2N2222 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N2222 | NPN Silicon Epitaxial Planar Transistor 2N2222 / 2N2222A
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Base 3. Collec | SEMTECH | transistor |
2 | 2N2222 | NPN Silicon Transistor | Texas | transistor |
3 | 2N2222 | Ultra-Fast Transient Response LDO Regulator 2N2220/2N2221/2N2222
300/600mA, Ultra-Fast Transient Response LDO Regulator
2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed sw | ART CHIP | regulator |
4 | 2N2222 | NPN Silicon Small Signal Transistor | Motorola Semiconductors | transistor |
5 | 2N2222 | Bipolar NPN Device 2N2222
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar NPN Device.
VCE | Seme LAB | data |
2N2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N20 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N20
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte Inchange Semiconductor mosfet | | |
2 | 2N2000 | (2N2000 / 2N2001) alloy-junction germanium transistors w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
ETC transistor | | |
3 | 2N2001 | (2N2000 / 2N2001) alloy-junction germanium transistors w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
ETC transistor | | |
4 | 2N2017 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A Central Semiconductor transistor | | |
5 | 2N2017 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
6 | 2N2018 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
7 | 2N2019 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | |
Esta página es del resultado de búsqueda del 2N2222. Si pulsa el resultado de búsqueda de 2N2222 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |