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PDF 2N2222A Data sheet ( Hoja de datos )

Número de pieza 2N2222A
Descripción HIGH SPEED SWITCHES
Fabricantes SGS-THOMSON 
Logotipo SGS-THOMSON Logotipo

2N2222A datasheet


1. - 75V, Silicon NPN Transistor






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DESCRIPTION
The 2N2218A, 2N2219A, 2N2221A and 2N2222A
are silicon planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218A and 2N2219A) and in Jedec
TO-18 (for 2N2221A and 2N2222A) metal cases.
They are designed for high-speed switching appli-
cations at collector currents up to 500 mA, and fea-
ture useful current gain over a wide range of collec-
tor current, low leakage currents and low saturation
voltages.
2N2218A/2N2219A approved to CECC
50002-100, 2N2221A/2N2222A approved to
CECC 50002-101 available on request.
2N2218A-2N2219A
2N2221A-2N2222A
HIGH SPEED SWITCHES
TO-39
TO-18
INTERNA L SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RAT INGS
Symbol
V CB O
VCE O
V EBO
IC
Pto t
T st g
Tj
Parameter
Collector-base Voltage (IE =0 )
Collector-emitter Voltage (IB =0 )
Emitter-base Voltage (IC =0 )
Collector Current
Total Power Dissipation at T amb 25 °C
for 2N2218 A and 2N2 219A
for 2N2221 A and 2N2 222A
at T ca s e 25 °C
for 2N2218 A and 2N2 219A
for 2N2221 A and 2N2 222A
Storage Temperature
Junction Temperature
January 1989
V al ue
75
40
6
0.8
0.8
0.5
3
1.8
– 65 to 200
175
Unit
V
V
V
A
W
W
W
W
°C
°C
1/8
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2N2222A pdf
Test Circuit fot td, tr.
2N 221 8A -2N2219A-2N2221A-2N2222A
PULSE GENERATOR :
tr 20 ns
PW 200 ns
ZIN =5 0
Test Circuit fot td,t r.
TO OSCILLOSCOPE :
tr 5.0 ns
ZIN < 100 K
CIN 12 pF
PULSE GENERATOR :
PW 10 µst
ZIN =5 0
TC 5.0 ns
TO OSCILLOSCOPE :
r <5 .0 ns
ZIN > 100 K
CIN 12 pF
5/8

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