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Datasheet 2SA1371 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1371 | High-Definition CRT Display/ Video Output Applications Ordering number:ENN1413D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1371/2SC3468
High-Definition CRT Display, Video Output Applications
Use
· Color TV chroma output and high breakdown voltage driver.
Package Dimensions
unit:mm 2006B
[2SA1371/2SC3468]
6.0 5.0
Features
· High breakdown vota |  Sanyo Semicon Device | transistor |
| 2 | 2SA1371 | PNP Transistor RoHS
2SA1371
2SA1371
FEATURES Power dissipation PCM
TRANSISTOR (PNP)
TO-92MOD
1. EMITTER 2. COLLECTOR 3. BASE
: 1
W (Tamb=25℃)
Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARA |  WEJ | transistor |
| 3 | 2SA1371 | SILICON PNP TRANSISTOR 2SA1371(3CA1371)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于彩电行输出和高击穿电压驱动。
Purpose: Color TV chroma output and high breakdown voltage driver.
特点:击穿电压高,反向传输电容小,高频特性好。
Features: High breakdown voltage, small rev |  LZG | transistor |
| 4 | 2SA1371 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistor
2SA1371
TRANSISTOR (PNP)
TO – 92M TO – 92MOD
1. COLLECTOR 1. EMITTER 2. BASE 2. COLLECTOR 3. EMITTER 3. BASE
FEATURES z High Breakdown Voltage z Small Reverse Transition Capacitance and High Frequency
M |  JIANGSU CHANGJIANG | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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